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Microstructures
Electron beam lithography
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Electron beam
lithography
Exposure of masks or glass wafers by e-beam
Parameters
completion of masks or direct exposure of glass substrates
4"x4" / 5"x5" / 6"x6" / 7"x7" (maximum thickness: 3mm)
exposure of glass wafers
ø 2,5" / ø 3" / ø 4" / ø 5" / ø 6"
smallest structure dimensions in the resist: 0,2 µm
smallest final structure dimensions: 0,6µm
interfaces for layout design:
CIF, DXF, GDS2, MEBES
unit: ZBA 21
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Electron
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